Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition
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چکیده
منابع مشابه
[111]B-oriented GaAsSb grown by gas source molecular beam epitaxy
We report the GaAsSb bulk layers and GaAsSb/GaAs quantum wells (QWs) grown on (1 1 1)B GaAs substrates by gas source molecular beam epitaxy. We found that Sb composition in the GaAsSb epilayers is very sensitive to the substrate temperature. The composition drops from 0.35 to 0.16 as the substrate temperature increases from 450 to 550 1C. The [1 1 1]B-oriented GaAsSb epilayers show phase separa...
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